Skip to main content
Communities & Collections
All of DSpace
Statistics
English
العربية
বাংলা
Català
Čeština
Deutsch
Ελληνικά
Español
Suomi
Français
Gàidhlig
हिंदी
Magyar
Italiano
Қазақ
Latviešu
Nederlands
Polski
Português
Português do Brasil
Srpski (lat)
Српски
Svenska
Türkçe
Yкраї́нська
Tiếng Việt
Log In
Log in
New user? Click here to register.
Have you forgotten your password?
Home
科技與工程學院
光電工程研究所
學位論文
學位論文
Permanent URI for this collection
http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/73896
Browse
Search
By Issue Date
By Author
By Title
By Subject
By Subject Category
Search
By Issue Date
By Author
By Title
By Subject
By Subject Category
1 results
Back to results
Filters
Author
search.filters.author.Po Yuan Chen
1
search.filters.author.陳柏源
Subject
1
search.filters.subject.Magnetic Perpendicular Anisotropy
1
search.filters.subject.Magnetic Tunneling Junction
1
search.filters.subject.Magnetoresistance
1
search.filters.subject.Nanowires
1
search.filters.subject.垂直磁異向性
Show more
Search subject
Submit
Browse subject tree
Date
Start
End
Submit
2011
1
Has files
Yes
Reset filters
Settings
Sort By
Accessioned Date Descending
Most Relevant
Title Ascending
Date Issued Descending
Results per page
1
5
10
20
40
60
80
100
Search
Author: search.filters.author.Po Yuan Chen
×
Has files: Yes
×
Search Tools
Search Results
Now showing
1 - 1 of 1
No Thumbnail Available
Item
具垂直異向性之一維磁性多層奈米線與磁性穿隧接面奈米元件
(
2011
)
陳柏源
;
Po Yuan Chen
Show more
具垂直磁異向性之奈米材料於發展下一代磁紀錄媒體與磁電阻式隨機存取記憶體扮演極重要的腳色。結合電化學電沉積技術與具奈米孔洞之氧化鋁模板可達成大量製造、低成本與高密度之目標。本研究所製備之鈷與鎳鐵合金之奈米線被證實具備垂直磁異向性且可透過磁晶異向性與形狀異向性來調整。結合具垂直磁異向性之鎳鐵合金奈米線與鈷鐵硼薄膜之磁性穿隧接面元件已成功被製造與探討。於低溫10K的環境下,鈷鐵硼薄膜厚度為1.5奈米時,其磁阻為104%,而鈷鐵硼薄膜厚度為1.0奈米時,其磁阻為110%,且在鈷鐵硼薄膜厚度小於1.0奈米時,於無固定層的條件下元件呈現出自旋閥的特性。
Show more