理學院

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學院概況

理學院設有數學系、物理學系、化學系、生命科學系、地球科學系、資訊工程學系6個系(均含學士、碩士及博士課程),及科學教育研究所、環境教育研究所、光電科技研究所及海洋環境科技就所4個獨立研究所,另設有生物多樣性國際研究生博士學位學程。全學院專任教師約180人,陣容十分堅強,無論師資、學術長現、社會貢獻與影響力均居全國之首。

特色

理學院位在國立臺灣師範大學分部校區內,座落於臺北市公館,佔地約10公頃,是個小而美的校園,內含國際會議廳、圖書館、實驗室、天文臺等完善設施。

理學院創院已逾六十年,在此堅固基礎上,理學院不僅在基礎科學上有豐碩的表現,更在臺灣許多研究中獨占鰲頭,曾孕育出五位中研院院士。近年來,更致力於跨領域研究,並在應用科技上加強與業界合作,院內教師每年均取得多項專利,所開發之商品廣泛應用於醫、藥、化妝品、食品加工業、農業、環保、資訊、教育產業及日常生活中。

在科學教育研究上,臺灣師大理學院之排名更高居世界第一,此外更有獨步全臺的科學教育中心,該中心就中學科學課程、科學教與學等方面從事研究與推廣服務;是全國人力最充足,設備最完善,具有良好服務品質的中心。

在理學院紮實、多元的研究基礎下,學生可依其性向、興趣做出寬廣之選擇,無論對其未來進入學術研究領域、教育界或工業界工作,均是絕佳選擇。

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Now showing 1 - 3 of 3
  • Item
    Enhanced Emission of (In, Ga) Nitride Nanowires Embedded with Self-assembled Quantum Dots
    (Wiley-VCH Verlag, 2008-03-25) C.-W. Hsu; A. Ganguly; C.-H. Liang; Y.-T. Hung; C.-T. Wu; G.-M. Hsu; Y.-F. Chen; Chia-Chun Chen; K.-H. Chen; L.-C. Chen
    We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor–liquid–solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.
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    Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates
    (Wiley-VCH Verlag, 2004-03-01) Z.-H. Lan; C.-H. Liang; C.-W. Hsu; C.-T. Wu; H.-M. Lin; S. Dhara; K.-H. Chen; L.-C. Chen; Chia-Chun Chen
    The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understanding in the one-dimensional (1D) system. Nanohomojunction (GaN on GaN) and nanoheterojunction (InN on GaN) nanorods (NRs) were formed in a two-step growth process by a vapor–liquid–solid (VLS) mechanism. Ga2O3 nanoribbons were formed using Ni as catalyst in a chemical vapor deposition (CVD) technique and then completely converted to GaN NWs with NH3 as reactant gas. An Au catalyst is used in the second step of the VLS process to grow GaN and InN NRs on GaN NWs using CVD techniques. A morphological study showed the formation of nanobrushes with different structural symmetries and sub-symmetries in both homogeneous and heterogeneous systems. Structural characterizations showed nearly defect-free growth of nanohomojunction (GaN) and nanoheterojunction (InN) NRs on 1D GaN NW substrates.
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    Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires
    (Wiley-VCH Verlag, 2000-05-01) Chia-Chun Chen; Chun-Chia Yeh
    GaN nanowires for high-efficiency optoelectronic devices? The simple method for the large-scale production of GaN nanowires presented here may bring us one step closer. Gallium and ammonia are reacted, using polycrystalline indium powder as a catalyst, to produce wire-like structures (see Figure) that show strong photoluminescence of the nanowires in the UV region.