室溫合成無機鈣鈦礦CsPbBr3應用於電阻式記憶體之特性研究
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2018
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無機鈣鈦礦CsPbBr3是一種半導體材料，不僅具有優異的半導體材料特性，還具有良好的離子導電性、良好的光吸收率與成本低等優點，這些特性使得這類材料在電阻式記憶體RRAM相當具有潛力。
本論文使用室溫反溶劑合成的方法來合成無機鈣鈦礦，並使用旋轉塗佈的方法應用於RRAM上Metal/Insulator/Metal三明治結構中的絕緣層，其中會透過有修復缺陷的鈣鈦礦薄膜與無修復缺陷的鈣鈦礦薄膜的電性量測進行比較，由電性量測結果發現無修復的鈣鈦礦薄膜，Set電壓約0.6V，Reset電壓約-1.9V；經過修復的鈣鈦礦薄膜為Set電壓約0.8V，Reset電壓約-2.6V，Set、Reset電壓都有增加的現象，但電壓電流特性曲線較為穩定。此外，將未修復的Ag/SiO2/CsPbBr3/SiO2/ITO樣品照射UV光，並測量低阻態與高組態時的電流變化，結果發現照射UV光時會產生光電流，造成低組態與高組態時的電流都會提升。
Inorganic perovskite CsPbBr3 is a semiconductor material that not only has excellent semiconductor material properties, but also has good ionic conductivity, good light absorption and low cost. All these properties make these types of materials have good potential for Resistance Random Access Memory (RRAM). In this experiment, the inorganic perovskite was synthesized by the method of anti-solvent synthesis at room temperature, and used the spin coating method to form the perovskite thin film for the insulating layer of the Metal/Insulator/Metal sandwich structure on RRAM. Also, we repaired the defect of perovskite thin film and compared with the non-repaired perovskite thin film. For the non-repaired perovskite thin film the set voltage was 0.6 V, and the Reset voltage was -1.9 V. For the repaired perovskite thin film the Set voltage was 0.8 V, and the Reset voltage is -2.6 V. We found that after repairing process the Set and Reset voltages all become larger than non-repaired, but the I-V curve is more stable than non-repaired. In addition, the non-repaired Ag/SiO3/CsPbBr3/SiO2/ITO samples were irradiated with UV light, and the current changes during low-resistance state LRS and high-resistance state HRS were measured. It was found that photocurrent was generated when UV light was irradiated, and resulting current increase in both HRS and LRS.
Inorganic perovskite CsPbBr3 is a semiconductor material that not only has excellent semiconductor material properties, but also has good ionic conductivity, good light absorption and low cost. All these properties make these types of materials have good potential for Resistance Random Access Memory (RRAM). In this experiment, the inorganic perovskite was synthesized by the method of anti-solvent synthesis at room temperature, and used the spin coating method to form the perovskite thin film for the insulating layer of the Metal/Insulator/Metal sandwich structure on RRAM. Also, we repaired the defect of perovskite thin film and compared with the non-repaired perovskite thin film. For the non-repaired perovskite thin film the set voltage was 0.6 V, and the Reset voltage was -1.9 V. For the repaired perovskite thin film the Set voltage was 0.8 V, and the Reset voltage is -2.6 V. We found that after repairing process the Set and Reset voltages all become larger than non-repaired, but the I-V curve is more stable than non-repaired. In addition, the non-repaired Ag/SiO3/CsPbBr3/SiO2/ITO samples were irradiated with UV light, and the current changes during low-resistance state LRS and high-resistance state HRS were measured. It was found that photocurrent was generated when UV light was irradiated, and resulting current increase in both HRS and LRS.
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鈣鈦礦, 電阻式記憶體, UV光, Perovskite, Resistance Random Access Memory(RRAM), UV Light