氧化鋅摻鋁與鋁誘發多晶矽薄膜之異質接面太陽能電池研究

Abstract

摘要

本實驗是在不銹鋼基板上利用n型氧化鋅摻鋁薄膜(AZO)與p型多晶矽薄膜結合成異質接面太陽能電池。其中p型多晶矽薄膜是利用鋁誘發多晶矽的方式製成。因此先利用射頻濺鍍系統在玻璃基板濺鍍鋁薄膜與非晶矽薄膜，並改變其退火溫度使鋁誘發非晶矽形成p型再結晶矽薄膜探討其導電性分析，之後與氧化鋅摻鋁薄膜在不銹鋼基板上形成可饒式異質接面太陽能電池。 其中氧化鋅摻鋁薄膜(AZO)先濺鍍於玻璃基板，改變薄膜厚度，探討其電性與光學特性。藉由厚度的改變可得較低的電阻率、高摻雜濃度與移動率，分別為3.49×10-4 Ω-cm、1.12×1020 cm-3、13.87 cm2/V‧S、並且擁有好的光穿透率光率的光電特性，約為80%左右。 利用AZO作為太陽能電池中的上電極以及n型接面與p型再結晶薄膜濺鍍於不銹鋼基板作為可繞式太陽能電池。可獲得一開路電壓為0.31 V，光電流為0.1 mA，光電轉化效率為0.0113 %的太陽能電池。

Abstract

In this work, we fabricated n-Al:ZnO(AZO)/p-polycrystalline-Si hetero-junction solar cells on stainless steel substrates. P-type polycrystalline silicon films were prepared by aluminum-induced crystallization and doping. First, we deposited Aluminum and amorphous silicon bilayers on glass substrates using a rf- sputtering system. We changed the annealing temperatures of the aluminum-induced crystallization to get good conducting p-polycrystalline-Si films, and then deposited them on stainless steel substrates to fabricate the hetero-junction solar cells with AZO thin films. AZO thin films, were grown onto glass substrates at room temperature and optimize the growth conditions to improve the transparency and electrical properties. The AZO films reveal low resistivity, high carrier concentration and mobility of 3.49×10-4 Ω-cm, 1.12×1020 cm-3 and 13.87 cm2/V‧S, respectively, and show a high light transmittance of ~80% for optical applications. AZO films have been used to be the front electrodes for the n-AZO/p-polycrystalline-Si hetero-junction solar cells. An open circuit voltage of 0.31 V, a photocurrent of 0.1 mA, and a photoelectric conversion efficiency of 0.011% of the solar cell are obtained.