鐵電氧化鉿鋯於記憶體應用: 矯頑場分析、衰退復原及立體垂直式多晶矽鐵電電晶體

Abstract

鐵電材料(Ferroelectric Material)作為新興非揮發性記憶體(emerging Non-Volatile Memory, eNVM)的熱門項目，已有許多相關研究與應用，如鐵電電晶體(FeFET)、鐵電隨機存取記憶體(FeRAM)等。然而，現今對於記憶體效能的要求日益嚴苛，在高速讀寫、提升耐久度次數、高密度儲存為首要改良的課題。反鐵電(Anti-Ferroelectric)材料相比於鐵電材料有更快的操作速度、低損耗、高耐久度等優勢，卻因其無法記憶的特性，只能作為揮發性記憶體。第二章將以反鐵電結合氧化鋁的雙層結構將其改變為非揮發性記憶體，並利用一階反轉曲線(First-order Reversal Curve, FORC)來討論矯頑場的差異性。第三章將以衰退復原機制應用於FeFET來討論該可行性。第四章將FeFET以立體垂直式閘極與多晶矽作為通道材料開發3D FeFET架構，具有個別儲存、讀取的優勢。Ferroelectric materials, as an emerging non-volatile memory (eNVM) technology, have gained significant attention in recent years. Various research and applications have been conducted, such as Ferroelectric Field-Effect Transistor (FeFET) and Ferroelectric Random Access Memory (FeRAM). However, the demand for memory performance has become increasingly stringent, particularly in areas such as high-speed read/write operations, enhanced endurance, and high-density storage.In comparison to ferroelectric materials, anti-ferroelectric materials offer advantages such as faster operation speed, lower energy consumption, and higher endurance. However, due to their inability to retain stored information, they can only be used as volatile memory. Chapter 2 will discuss the conversion of anti-ferroelectric materials combined with Al2O3 into non-volatile memory (NVM) and explore the differences in coercive field using First-order Reversal Curve (FORC) analysis. Chapter 3 will discuss the feasibility of applying the fatigue recovery mechanism to FeFET. Chapter 4 will focus on the development of a 3D FeFET architecture using a three-dimensional vertical gate and polycrystalline silicon as the channel material, offering advantages of individual storage and retrieval.