Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS(2) nanocrystals embedded in poly(3-hexylthiophene)
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Date
2011-07-27
Authors
C.-W. Lin
D.-Y. Wang
Y. Tai
Y.-T. Jiang
M.-C. Chen
Chia-Chun Chen
Y.-J. Yang
Y.-F. Chen
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Abstract
Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.