A 90-nm CMOS broadband and miniature Q-band balanced medium power amplifier
dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
dc.contributor.author | Jeng-Han Tsai | en_US |
dc.contributor.author | Yi-Lin Lee | en_US |
dc.contributor.author | Tian-Wei Huang | en_US |
dc.contributor.author | Cheng-Ming Yu | en_US |
dc.contributor.author | John G. J. Chern | en_US |
dc.date.accessioned | 2014-10-30T09:28:46Z | |
dc.date.available | 2014-10-30T09:28:46Z | |
dc.date.issued | 2007-06-08 | zh_TW |
dc.description.abstract | This paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thin-film microstrip (TFMS) line technique, has a compact chip size of 0.78 x 0.92 mm2. The MMIC demonstrates a measured gain of 14.5 dB at 48 GHz. With the feature of the balanced amplifier, the MMIC has a 3-dB bandwidth up to 37.2 % from 35 to 51 GHz with flat gain and return loss frequency response. Furthermore, the balanced amplifier delivers a saturation output power of 10.6 dBm with 8% PAE and OPldB is 7.5 dBm. | en_US |
dc.description.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4264027 | zh_TW |
dc.identifier | ntnulib_tp_E0611_02_020 | zh_TW |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32279 | |
dc.language | en | zh_TW |
dc.relation | IEEE MTT-S Int.Microwave Symp. Dig,Honolulu, HI, pp. 1129-1132. (EI, NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, and NSC 93-2752-E-002-003-PAE.) | en_US |
dc.subject.other | millimeter-wave (MMW) | en_US |
dc.subject.other | Q-band | en_US |
dc.subject.other | CMOS | en_US |
dc.subject.other | balanced amplifier | en_US |
dc.subject.other | thin-film microstrip (TFMS) | en_US |
dc.subject.other | broad-side coupler. | en_US |
dc.title | A 90-nm CMOS broadband and miniature Q-band balanced medium power amplifier | en_US |