矽於鎢表面上的擴散與成長

Abstract

本實驗使用場離子顯微鏡研究矽原子吸附在鎢表面上的擴散行為與排列方式。藉由擴散運動實驗，我們得到單顆矽原子在鎢(110)和鎢(211)上的擴散活化能分別為0.66±0.04(eV)和0.48±0.01(eV)。在排列方面的觀察發現：鎢(110)上的矽原子在高覆蓋率時長成(2√2/√3×4/√3)R35.26結構；鎢(211)上的矽原子排成有間隔的直鏈狀結構；鎢(111)上的矽原子排成三角或直鏈型結構；鎢(411)上的矽原子排成(1×1)結構。 另外，我們為了蒸鍍鍺而嘗試了幾種方法，其中發現使用鎢舟是比較簡單有效的方法。

The study is about diffusion dynamics and growth structure of Si adatoms on W surfaces by field ion microscope. The diffusion activation energy of Si adatom on W(110) and W(211) surfaces are 0.66±0.04(eV) and 0.48±0.01(eV) respectively. In growth structure study: on W(110) facet we can observe the Si adatoms be arranged in ((2√2)/√3×4/√3)R35.26 structure; Si adatoms can be grown straight arrangement on W(211); Si adatoms can be grown triangular and straight arrangement on W(111); Si adatoms can be grown (1×1) structure on W(411). In addition, we try several methods to deposition germanium. As a result, we found that using W boat is better than the other methods.