一維半導體光子晶體光學性質之研究

Abstract

Photonic crystals (PCs), artificial periodic structures, have attracted much attention over the past two decades. Conventional dielectric-dielectric PCs have been greatly studied in the literature. In this thesis, we have studied the optical properties in semiconductor-dielectric photonic crystals (SDPCs). There are three topics. The first one is to study the near-infrared photonic band structure in a doped SDPC. By varying the doping concentration in n-Si, tunable properties in such a PC have been investigated in detail. The effect of filling factor on the PBG is also reported. The second part is to study the absorption issue in an SDPC. With the difference in the refractive indices in the constituent layers and the existence of imaginary part of the index, enhancement in the absorption in the band edges is clearly shown. This enhancement is an requirement in the LED application. The third part is to study the thermally tunable photonic band structure and omnidirectional band gap. We use the intrinsic semiconductor InSb as one of the constituent in our binary PC. With the strongly temperature-dependent permittivity of InSb, the tunability in the photonic band structure and the omnidirectional gap is numerically investigated.

Photonic crystals (PCs), artificial periodic structures, have attracted much attention over the past two decades. Conventional dielectric-dielectric PCs have been greatly studied in the literature. In this thesis, we have studied the optical properties in semiconductor-dielectric photonic crystals (SDPCs). There are three topics. The first one is to study the near-infrared photonic band structure in a doped SDPC. By varying the doping concentration in n-Si, tunable properties in such a PC have been investigated in detail. The effect of filling factor on the PBG is also reported. The second part is to study the absorption issue in an SDPC. With the difference in the refractive indices in the constituent layers and the existence of imaginary part of the index, enhancement in the absorption in the band edges is clearly shown. This enhancement is an requirement in the LED application. The third part is to study the thermally tunable photonic band structure and omnidirectional band gap. We use the intrinsic semiconductor InSb as one of the constituent in our binary PC. With the strongly temperature-dependent permittivity of InSb, the tunability in the photonic band structure and the omnidirectional gap is numerically investigated.