A miniature Q-band low noise amplifier using 0.13-m CMOS technology
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Date
2006-06-01
Authors
Jeng-Han Tsai
Wei-Chien Chen
To-Po Wang
Tian-Wei Huang
Huei Wang
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE Microwave Theory and Techniques Society
Abstract
A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.