矽量子點光檢測器之研究

Abstract

在本篇論文中，提供一種具多重奈米量子點檢測光子之光電子元件，藉由“重複堆疊結構”形成矽量子點與穿透接面，做為光檢測器之檢測構件，進而製作出矽量子點光檢測器。 在光檢測之實驗中，將針對奈米級光檢測器元件結構做光電效應特性之量測，利用不同波長之光源照射至矽量子點，藉由矽量子點扮演光轉換為電之主要角色，量測結果顯示，此元件吸收光源進而產生光電流之轉換效率非常高，具有高敏感與非常靈敏之光切換特性，並且元件本身之雜訊與暗電流特性都非常低。另外，經過長時間之光檢測實驗測量之後，其光電效應之特性也不會改變。元件在不同波長(300 nm ~ 1000 nm)之光源照射下，所得量子效率與光響應度非常高。因此，針對量測結果，進一步分析元件中光子與電子間主要之交互作用，即探討半導體矽量子點光檢測器之主要工作原理與其影響。In this study, we fabricated a nano device formed by plurality of artificial quantum dots and tunneled junctions, which served as a detection element of photodetector. In the experiments, the characteristic analysis of the photoelectric effect of optoelectronic devices, when it is play a main role in silicon quantum of the photodetector, which can transform an optic signal to an electric signal, and illuminate the light source of different wavelength, Experiment in the light examination, will aim at the detector part structure to make gauging the photoelectric effect characteristic. Silicon quantum dots play the main role of transform an optic signal to an electric signal by different wave length of illumination. The gauging results demonstrated, the device absorbed photo-energy then transfer the energy to high efficiency photoelectric current. Our device has stable and high sensitively, fast switches over the characteristic, and the device noise and dark current characteristic are all very low. Moreover, after passes through light of examination experiment the long time surveys, characteristic of its photoelectric effect cannot change. Under the different wave length (300 nm ~ 1000 nm) illumination, the obtained quantum efficiency and light responsiveness is extremely high. Therefore, in view of the gauging result, further analyzes in the part between the photon and the electron the main correlation, if namely discusses the semiconductor vs. quantum light detector the prime task principle to affect.