半導體光子晶體光學性質溫度效應之研究
Abstract
這篇論文有五個章節。第一個章節是介紹光子晶體的基本性質與歷史，第二章節是敘述我們計算光子晶體多層膜結構的理論及方法。第三章節我們要探討一維光子晶體SDPC使用的材料為矽及二氧化矽，在原結構下，SDPC的光子能隙隨著溫度增加而向右偏移，而在第二個結構中，我們參雜入SiO2，光子能隙與缺陷模態都隨著溫度向右偏移，第三個結構中，我們參雜入InSb，光子能隙與缺陷模態都隨著溫度向右偏移，再改變InSb的參雜濃度N’，發現，當參雜濃度N’上升時，產生缺陷模態時的波長有微量減少的趨勢。第四章節我們要探討一維光子晶體MSPC使用的材料為鋁及InSb，在原結構下，顯示第三章中SDPC溫度效應在金屬加入後顯得非常不明顯，再以不同入射角的TE波(S波)與TM波(P波)入射，發現TE波(S波)受入射角影響較TM波(P波)稍大，最後在第五章節是我們的結論。
The thesis consists of five chapters. Chapter 1 is to give a brief review of basic properties of the Photonic Crystal and its history. Chapter 2 introduces the theoretical methods to be used in the calculation of the multilayer film structure of Photonic Crystal. In chapter 3, we study the one-dimensional Photonic Crystal used by Si and SiO2. Three possible configurations are considered. In the first original structure, we find the Photonic Band Gap will be shifted as the temperature increases. The second will add SiO2 to the original structure and from which we find the Photonic Band Gap and Defect Mode both are moved as the temperature increases. The third one will add InSb to the original structure and we also find the Photonic Band Gap and Defect Mode both are dependent on the temperature. Then, we change the concentration of InSb. We find Defect Mode is not a sensitive function of concentration. In chapter 4, we study the one-dimensional Photonic Crystal, MDPC made by Al and InSb. In this case, we cannot find the shifting behavior in the Photonic Band Gap like in Chapter 3. Then we change the incidence of angle in both TE-wave (S-wave) and TM-wave (P-wave). The angular dependence will be investigated. The conclusion is given in Chapter 5.
The thesis consists of five chapters. Chapter 1 is to give a brief review of basic properties of the Photonic Crystal and its history. Chapter 2 introduces the theoretical methods to be used in the calculation of the multilayer film structure of Photonic Crystal. In chapter 3, we study the one-dimensional Photonic Crystal used by Si and SiO2. Three possible configurations are considered. In the first original structure, we find the Photonic Band Gap will be shifted as the temperature increases. The second will add SiO2 to the original structure and from which we find the Photonic Band Gap and Defect Mode both are moved as the temperature increases. The third one will add InSb to the original structure and we also find the Photonic Band Gap and Defect Mode both are dependent on the temperature. Then, we change the concentration of InSb. We find Defect Mode is not a sensitive function of concentration. In chapter 4, we study the one-dimensional Photonic Crystal, MDPC made by Al and InSb. In this case, we cannot find the shifting behavior in the Photonic Band Gap like in Chapter 3. Then we change the incidence of angle in both TE-wave (S-wave) and TM-wave (P-wave). The angular dependence will be investigated. The conclusion is given in Chapter 5.
Description
Keywords
光子晶體, 光子能隙, 缺陷模態, Photonic Crystal, Photonic Band Gap, Defect Mode