教師著作
Permanent URI for this collectionhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/31268
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Item A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-μm SiGe BiCMOS technology(2006-06-01) Ping-Chen Huang; Ren-Chieh Liu; Jeng-Han Tsai; Hong-Yeh Chang; Huei Wang; John Yeh,Chwan-Ying Lee; John ChernThis paper presents a compact 35-65 GHz Gilbert cell up-convert mixer implemented in TSMC 0.18- ȝm SiGe BiCMOS technology. Integrated broadband transformers and meandered thin-film microstrip lines were utilized to achieve a miniature chip area of 0.6 mm × 0.45 mm. The compact MMIC has a flat measured conversion loss of 7 ± 1.5 dB and LO suppression of more than 40 dB at the RF port from 35 to 65 GHz. The power consumption is 14 mW from a 4-V supply. This is a fully integrated millimeterwave active mixer that has the smallest chip area ever reported, and also the highest operation frequency among up-conversion mixers using silicon-based technology.Item A miniature 38-48 GHz MMIC sub-harmonic transmitter with post-distortion linearization(2007-06-08) Jeng-Han Tsai; Tian-Wei HuangThis paper presents a miniature 38-48 GHz sub-harmonic transmitter with post-distortion linearization using a 0.15-mum GaAs HEMT process. The transmitter, which integrates a sub-harmonic mixer, a band-pass driver amplifier, and a linearizer, has a compact chip size of 2.5 mm2 with conversion gain of 7 plusmn 1.5 dB from 38 to 48 GHz. With the features of the sub-harmonic mixer and band-pass driver amplifier, the 2fLO leakage rejection of the transmitter is 47 dB. For the linearity of the transmitter, a post-distortion linearizer is added. After linearization, the output spectrum re-growth can be suppressed by 8 dB at 40 GHz. To keep ACPR below -35 dBc, the output power has been increased from -2 to 1 dBm, which means the linear output power has been doubled after linearization.Item A 90-nm CMOS broadband and miniature Q-band balanced medium power amplifier(2007-06-08) Jeng-Han Tsai; Yi-Lin Lee; Tian-Wei Huang; Cheng-Ming Yu; John G. J. ChernThis paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thin-film microstrip (TFMS) line technique, has a compact chip size of 0.78 x 0.92 mm2. The MMIC demonstrates a measured gain of 14.5 dB at 48 GHz. With the feature of the balanced amplifier, the MMIC has a 3-dB bandwidth up to 37.2 % from 35 to 51 GHz with flat gain and return loss frequency response. Furthermore, the balanced amplifier delivers a saturation output power of 10.6 dBm with 8% PAE and OPldB is 7.5 dBm.Item A 71-76 GHz CMOS variable gain amplifier using current steering technique(2008-06-17) Che-Chung Kuo; Zuo-Min Tsai; Jeng-Han Tsai; Huei WangA 71-76 GHz high dynamic range CMOS RF variable gain amplifier (VGA) is presented. Variable gain is achieved using two current-steering trans-conductance stages, which provide high linearity with relatively low power consumption. The circuit is fabricated in a MS/RF 90-nm CMOS technology and consumes 18-mA total current from a 2-V supply. This VGA achieves a 14-dB maximum gain, a 30-dB gain controlled range, and a 4-dBm output saturation power. To the authorpsilas knowledge, this VGA demonstrates the highest operation frequency among the reported CMOS VGAs.Item A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology(IEEE Microwave Theory and Techniques Society, 2007-04-01) Jeng-Han Tsai; Pei-Si Wu; Chin-Shen Lin; Tian-Wei Huang; John G.J. Chern; Wen-Chu Huang; Huei WangA compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3plusmn2dB measured conversion gain (to 50-Omega load) from 25 to 75GHz with a compact chip size of 0.30mm2. The OP1 dB of the mixer is 1dBm and -4dBm at 40 and 60GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to dateItem Design and analysis of a 44-GHz MMIC low-loss built-in linearizer for high-linearity medium power amplifiers(IEEE Microwave Theory and Techniques Society, 2006-06-01) Jeng-Han Tsai; Hong-Yeh Chang; Pei-Si Wu; Yi-Lin. Lee; Tian-Wei Huang; Huei WangA 44-GHz monolithic microwave integrated circuit (MMIC) low-loss built-in linearizer using a shunt cold-mode high-electron mobility transistor (HEMT), based on the predistortion techniques, is presented in this paper. The proposed cold-mode HEMT linearizer can enhance the linearity of the power amplifier (PA) with a low insertion loss (IL<2 dB), a compact die-size, and no additional dc power consumption. These advantages make the linearizer more suitable for millimeter-wave (MMW) applications. The physical mechanism of the gain expansion characteristics of the proposed linearizer is analyzed. A systematic design procedure for a low-loss linearizer is developed, which includes: 1) insertion loss minimization through a device-size selection and 2) linearity optimization through a two-tone test. To demonstrate the general usefulness of the proposed linearizer, the linearizer was applied to a two-stage 44-GHz MMIC medium PA and a commercial MMW PA module. After linearization, the output spectrum regrowth is suppressed by 7-9 dB. To keep the adjacent channel power ratio below -40 dBc, the output power has been doubled from 15 to 18 dBm at 44 GHz. The error vector magnitude of the 16-quadrature amplitude modulation signal can be reduced from 6.11% to 3.87% after linearization. To the best of our knowledge, this is the first multistage MMW PA with a low-loss built-in linearizerItem A miniature Q-band low noise amplifier using 0.13-m CMOS technology(IEEE Microwave Theory and Techniques Society, 2006-06-01) Jeng-Han Tsai; Wei-Chien Chen; To-Po Wang; Tian-Wei Huang; Huei WangA miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.Item A W-band high-power predistorted direct-conversion digital modulator for transmitter applications(IEEE Microwave Theory and Techniques Society, 2005-09-01) Hong-Yeh Chang; Jeng-Han Tsai; Tian-Wei Huang; Huei Wang; Yongxiang Xia; Yonghui ShuThis letter presents a W-band high-power direct-conversion transmitter using digital predistortion techniques for digital modulation applications. The transmitter is a direct-conversion configuration that employs a reflection-type IQ modulator module and a power amplifier module. With the predistortion function in digital signal processing (DSP), this transmitter demonstrated an output channel power of greater than 19 dBm, and the adjacent channel power ratio (ACPR) was improved by 10 and 18 dB for QPSK and π/4-DQPSK modulation, respectively. To the best of our knowledge, this is the first demonstration of linearization techniques for W-band high-power digital modulation transmitters.Item A 38-46-GHz MMIC Doherty power amplifier using post-distortion linearization(IEEE Microwave Theory and Techniques Society, 2007-05-01) Jeng-Han Tsai; Tian-Wei HuangThis letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-mum GaAs HEMT process, achieves a small signal gain of 7dB from 38 to 46GHz with a compact chip size of 2mm2. The saturation output power of the Doherty amplifier is 21.8dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18dB at 42GHz compared with the balanced amplifier operationItem A 42-GHz transmitter linearization using pre-distortion IF amplifier(Wiley-Blackwell, 2009-06-01) Jeng-Han TsaiThis article presents a millimeter-wave (MMW) transmitter linearization using predistortion IF amplifier. The predistortion IF amplifier was designed in 0.18-μm CMOS technology at 2.4 GHz. It can provide predistortion function at IF port to linearize the whole MMW transmitter. The 42-GHz transmitter module is custom design. After linearization, 8 dB ACPR improvement of the 42-GHz MMW transmitter module can be achieved. The linear output power of the 42-GHz transmitter module has been increased 2 dBm for the same linearity requirements