利用波長365nm黃光微影製程之奈米微結構

dc.contributor李敏鴻zh_TW
dc.contributorLee, Min-Hungen_US
dc.contributor.author郭峻岳zh_TW
dc.contributor.authorKuo, Chun-Yuehen_US
dc.date.accessioned2019-09-04T01:27:56Z
dc.date.available2017-08-02
dc.date.available2019-09-04T01:27:56Z
dc.date.issued2017
dc.description.abstract鰭型電晶體有利於微縮以獲得更好閘極控制能力,本實驗欲透過波長365nm黃光微影製程方式,而非電子束直寫(E-beam Direct Write, EBDW),將鰭型線寬曝光至奈米鰭/奈米牆,但若只是單純使用一般黃光微影製程的極限,是無法將線寬曝至奈米等級之理想值,故欲透過Dummy Fin 設計以保護與光罩本身結構設計,避免顯影時被沖斷,再者透過水平爐管熱氧化(Oxidation)方式,進一步對Fin本身進行二度線寬微縮,才有辦法將鰭型線寬(Fin Width)微縮至奈米級的線寬,而本論文則將奈米鰭/奈米牆成功達到8奈米線寬。zh_TW
dc.description.abstractFin-type transistor has well gate control capability. This study will investigate photo lithography process to reach the nanometer scale fin/wall by wavelength 365nm without E-beam writer. We will design the dummy layout to protect and avoid damage the Fin. In order to further reduce Fin width, the thermal oxidation process is used to comsumpt Si and obtains the nano-scale line width. The nano Fin/wall is successfull demonstrated with Fin width 8nm in this thesis.en_US
dc.description.sponsorship光電科技研究所zh_TW
dc.identifierG060448025S
dc.identifier.urihttp://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060448025S%22.&%22.id.&
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/98012
dc.language中文
dc.subject鰭型電晶體zh_TW
dc.subject鰭型線寬zh_TW
dc.subject奈米鰭/奈米牆zh_TW
dc.subject黃光微影zh_TW
dc.subjectfin-shaped FETen_US
dc.subjectFin widthen_US
dc.subjectnano Fin/wallen_US
dc.subjectphoto lithographyen_US
dc.title利用波長365nm黃光微影製程之奈米微結構zh_TW
dc.titleNano-Scale Structure with Lithography Process by Wavelength 365nmen_US

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