摻雜之二硫化硒層狀材料在作為場效應電晶體通道對降低源/汲極接觸電阻之研究

Abstract

近幾年，過渡金屬硫屬化合物因為具有能隙關係，比同樣具有二維結構的石墨烯更適合用在電晶體元件製作，因此吸引很研究學者的興趣。其中WSe2是屬於P型的半導體更特別引人關注，然而一直缺乏一個穩定可控制的摻雜技術，難度頗高。本篇將開發一個穩定可行的摻雜製程，利用共濺鍍製程技術加上後硒化處理。希望用這個方法能夠讓電晶體的載子濃度及載子遷移率提升，讓通道電阻及接觸電阻有效的降低。Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.